Recognition of defect structure of Si(A4) by on-line support vector machine

Statistics – Applications

Scientific paper

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Scientific paper

In this paper the application of on-line support vector machine to spectral surface approximation is presented. The experimental data were obtained by the photocurrent decay measurement as function of time and temperature for a sample of neutron irradiated silicon. This approach enabled to extract the deep level center defect parameters: activation energy and pre-exponential factor.

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