Recent developments on a 128 X 128 indium antimonide/FET switch hybrid imager for low-background applications

Details Recent developments on a 128 X 128 indium antimonide/FET switch hybrid imager for low-background applications Recent developments on a 128 X 128 indium antimonide/FET switch hybrid imager for low-background applications

Jan 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986spie..686...76b&link_type=abstract

IN: Infrared detectors, sensors, and focal plane arrays; Proceedings of the Meeting, San Diego, CA, Aug. 21, 22, 1986 (A88-12689

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Field Effect Transistors, Indium Antimonides, Infrared Detectors, Linear Arrays, Multiplexing, Switching Circuits, Architecture, Photovoltaic Conversion, Shift Registers, Silicon Transistors, Technology Assessment

Scientific paper

By combining high-quality mesa photovoltaic indium antimonide detector material with a silicon x-y FET switch multiplexer, a useful infrared area detector has been developed. This device is intended for low-background applications, where high sensitivity is required. Initial characterization of the detector at 80 K showed a KTC limited read noise of less than 1000 electrons, good dark current, responsivity uniformity, and a maximum readout rate of 10 MHz. The hybrid mating technology has sufficient precision to allow expansion to a 256 x 256 format. The dark current in the detector material is sufficiently low to allow full-frame integration, even with arrays as large as 256 x 256 elements.

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