Computer Science
Scientific paper
Dec 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735...92i&link_type=abstract
Proc. SPIE Vol. 1735, p. 92-100, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.
Computer Science
2
Scientific paper
Recent developments in metal-organic chemical vapor deposition (MOCVD) growth of the infrared detector material Hg(subscript 1-x)Cd(subscript x)Te can be subdivided into three main areas: reaction kinetics, in situ monitoring of growth and doping. The growth regime for most laboratories is kinetic/catalytic, and a good understanding of these growth mechanisms is essential for adequate control of growth rate and composition. In situ monitoring using laser reflectance can measure growth rate and composition and can be sensitive to morphology throughout a multilayer structure. This new information on the kinetic processes is a powerful diagnostic tool for the crystal grower. Doping the epitaxial layers with low volatility organometallics, or in the case of As using the diluted hydride, has been demonstrated by a number of laboratories, but problems with memory doping from indium and incorporation/activation efficiencies for arsenic will be resolved by understanding the surface chemistry. Arsenic implanted double layer heterostructure diode results show comparable 80 K R(subscript O)A values to LPE p/n diodes.
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