Real-time electron counting in semiconductor nanostructures

Details Real-time electron counting in semiconductor nanostructures Real-time electron counting in semiconductor nanostructures

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5790..254r&link_type=abstract

Terahertz for Military and Security Applications III. Edited by Hwu, R. Jennifer; Woolard, Dwight L.; Rosker, Mark J. Procee

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By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.

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