Other
Scientific paper
Mar 1990
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990trdf.rept.....k&link_type=abstract
Final Technical Report, 1 Oct. 1986 - 28 Feb. 1990 Technion Research and Development Foundation Ltd., Haifa (Israel).
Other
Annealing, Damage, Hall Effect, Ion Implantation, Mercury Cadmium Tellurides, Stoichiometry, Activation, Backscattering, Electrical Properties, Removal, Spectrometers, Submerging, Thermal Radiation
Scientific paper
Different Rapid Thermal Annealing techniques were employed to achieve damage removal and electrical activation of dopants in ion implanted Hg(1-x)Cd(x)Te (x = 0.2, 0.3). As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth (AMEBA) which was developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements.
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