Raman Excitation Profiles for Single Wall Carbon Nanotubes

Details Raman Excitation Profiles for Single Wall Carbon Nanotubes Raman Excitation Profiles for Single Wall Carbon Nanotubes

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..267n&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 267-268 (2007).

Mathematics

Probability

Nanotubes, Phonons Or Vibrational States In Low-Dimensional Structures And Nanoscale Materials, Infrared And Raman Spectra

Scientific paper

The Raman excitation profiles for single wall carbon nanotubes with diameter range 8-20 Å are calculated using transition probability in the third order perturbation theory and full symmetry of nanotubes. Due to the strong antenna effect, only incoming and scattered light polarized along the tube axis is considered. In such a geometry only the totaly symmetric, radial breathing (being the main scope of the paper) and high energy phonon modes are Raman active. Strong dependence of resonant maxima on tube parameters is found. Absence of the second transition peak in excitation profiles of semimetallic tubes is explained as a consequence of weak electron-phonon coupling.

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