Radiative association of C and P, and Si and P atoms

Details Radiative association of C and P, and Si and P atoms Radiative association of C and P, and Si and P atoms

Nov 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006mnras.372.1653a&link_type=abstract

Monthly Notices of the Royal Astronomical Society, Volume 372, Issue 4, pp. 1653-1656.

Astronomy and Astrophysics

Astronomy

2

Atomic Data, Atomic Processes, Circumstellar Matter, Ism: Molecules

Scientific paper

The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 × 10-18 to 1.62 × 10-18cm3s-1 and from 3.73 × 10-20 to 7.03 × 10-20cm3s-1 for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.

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