Pulsed Gunn-diode oscillator - 40 W at 16 GHz

Details Pulsed Gunn-diode oscillator - 40 W at 16 GHz Pulsed Gunn-diode oscillator - 40 W at 16 GHz

Dec 1974

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1974ell....10..531s&link_type=abstract

Electronics Letters, vol. 10, Dec. 12, 1974, p. 531-533.

Other

Electric Power, Gunn Diodes, Microwave Oscillators, Pulsed Radiation, Volt-Ampere Characteristics, Broadband, Cavity Resonators, Gunn Effect, Modulators, Negative Resistance Devices, Superhigh Frequencies, Trigger Circuits

Scientific paper

Very high peak power levels at microwave frequencies can be generated from several semiconductor devices (Gunn diodes, LSA mode devices, trapatts etc.), but some of these devices are only a little removed from laboratory devices, and are limited in frequency. The Gunn device is the most practical and proven device, but, at 16 GHz, is only capable of powers of about 10 W peak. A simple technique is described that results in the addition of the powers and which does not degrade the other parameters, such as RF risetime.

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