Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells

Details Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells

Nov 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454...85b&link_type=abstract

Proc. SPIE Vol. 4454, p. 85-93, Materials for Infrared Detectors, Randolph E. Longshore; Ed.

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Intersubband transition in 3-Me He+-ion or 1 MeV proton irradiated GaAs/AlGaAs multiple quantum wells were studied using optical absorption technique. The intersubband transitions in 3MeV He+-ion irradiated were completely depleted in samples irradiated with doses as low as 1 X 1014 cm-2. Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses while in heavily irradiated samples intersubband transition show no annealing recovery which could be said irradiation induced defects are so severe that annealing temperature could not repair the damage. On the other hand, intersubband transitions in 1 MeV proton irradiated samples were completely depleted with irradiation doses as low as 4 X 1014 cm-2. More than 80 percent recovery was achieved at annealing temperature as low as 650 degrees C. The total integrated area and peak position energy of un-irradiated and irradiated samples were monitored as a function of annealing temperature. Depletion recovery here is noted to depend on the thermal annealing and irradiation dose.

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