Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass

Details Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass Progress on a New Non-Volatile Memory for Space Based on Chalcogenide Glass

Feb 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004aipc..699..639m&link_type=abstract

SPACE TECHNOLOGY AND APPLICATIONS INTERNAT.FORUM-STAIF 2004: Conf.on Thermophys.in Microgravity; Commercial/Civil Next Gen.Space

Computer Science

Performance

1

Spaceborne And Space Research Instruments, Apparatus, And Components, Microcircuit Quality, Noise, Performance, And Failure Analysis, Gamma-Ray Effects

Scientific paper

We report on the progress of a recent addition to non-volatile solid state memory technologies suited for space and other ionizing radiation environments. We summarize the material and processing science behind the current generation of chalcogenide phase-change memories fabricated on CMOS structures. The chalcogenide material used for phase-change applications in rewritable optical storage (Ge2Sb2Te5) has been integrated with a radiation hardened CMOS process to produce 64kbit memory arrays. On selected arrays electrical testing demonstrated up to 100% memory cell yield, 100ns programming and read speeds, and write currents as low as 1mA/bit. Devices functioned normally from - 55°C to 125°C. Write/read endurance has been demonstrated to 1 × 108 before first bit failure. Radiation results show no degradation to the hardened CMOS or effects that can be attributed to the phase-change material. Future applications of the technology are discussed.

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