Progress in negative luminescent Hg1-xCdxTe diode arrays

Details Progress in negative luminescent Hg1-xCdxTe diode arrays Progress in negative luminescent Hg1-xCdxTe diode arrays

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5783..376h&link_type=abstract

Infrared Technology and Applications XXXI. Edited by Andresen, Bjorn F.; Fulop, Gabor F. Proceedings of the SPIE, Volume 5783,

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Negative luminescent devices, which absorb more light than they emit when reverse biased, have a large number of applications including, reference planes for thermal cameras, infrared (IR) sources and IR scene projection. This paper describes devices made from mercury cadmium telluride grown on silicon substrates, focusing on large area arrays with reduced operating powers. Novel growth structures and device designs have been investigated in order to reduce the series resistance. Results from the first dry etched, LW MCT on Si, 1 cm2 device with optical concentrators are presented.

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