Progress in MBE growth of HgCdTe at SITP

Details Progress in MBE growth of HgCdTe at SITP Progress in MBE growth of HgCdTe at SITP

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795...17h&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

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This paper describes some recent results on surface defects, uniformity, dislocation density as well as device applications of MBE growth of HgCdTe at the research center of advanced materials and devices. The features of different surface defects and their origins were studied by using SEM/EDX observations on HgCdTe epilayers with different growth conditions. A variety of surface defects was observed and the formation mechanism was discussed. A good uniformity was observed over 3-in HgCdTe wafers, the Stddev/mean in x and thickness were 1.2%, and 2.7%, respectively. It was found that the dislocation density was sensitive to growth parameters and the composition. The ZnCdTe substrates with 4% mole fraction were found to be suitable for LW HgCdTe, however, for the HgCdTe of shorter wavelengths different Zn composition is required. An average value of EPD of 4.2×105cm-2 was obtained for LW samples. The MBE grown HgCdTe were incorporated into some preliminary FPA devices.

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