Profile control of SU-8 photoresist using different radiation sources

Details Profile control of SU-8 photoresist using different radiation sources Profile control of SU-8 photoresist using different radiation sources

Apr 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4407..119c&link_type=abstract

Proc. SPIE Vol. 4407, p. 119-125, MEMS Design, Fabrication, Characterization, and Packaging, Uwe F. Behringer; Deepak G. Uttamch

Other

3

Scientific paper

Patterning of thick layer SU-8 photoresist has been investigated with different radiation sources, including electron beam, X-ray, i-line stepper, UV mercury lamp with collimator, as well as two different types of UV contact maskaligner. Feature profiles with thickness up to 1 mm have been compared. Among all the radiation sources, x-ray exposure from a synchrotron radiation source is found to produce the best feature dimension control and has the highest feature aspect ratio. I-line stepper can also produce features with steep side wall but is limited to less than 200 micrometers resist thickness. The illumination parallelism is the key to control the resist profile, no matter what radiation sources are used. Other issues such as process condition become important when resist layer thickness is over 500 micrometers . Conditions for better profile control with thicker layer SU-8 photoresist are suggested.

Affiliated with

Also associated with

No associations

Rating

Profile control of SU-8 photoresist using different radiation sources does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Profile control of SU-8 photoresist using different radiation sources, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Profile control of SU-8 photoresist using different radiation sources will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-962723