Population ratios of fine structure levels

Details Population ratios of fine structure levels Population ratios of fine structure levels

Feb 1979

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979a%26as...35..257s&link_type=abstract

Astronomy and Astrophysics Supplement Series, vol. 35, Feb. 1979, p. 257-270. Research supported by the Nederlandse Organisatie

Astronomy and Astrophysics

Astrophysics

34

Absorption Spectra, Atomic Energy Levels, Atomic Excitations, Fine Structure, Interstellar Chemistry, Interstellar Gas, Atomic Collisions, Carbon, Gas Density, Ground State, Nitrogen, Oxygen Spectra, Recombination Reactions, Silicon, Transition Probabilities, Ultraviolet Absorption

Scientific paper

Population ratios of the fine-structure levels in the ground state are calculated for Si II, C II, N III, N II, O I, and C I. These elements have observed interstellar absorption lines arising from these levels, and the population ratios can be used to determine the temperature and density of the absorbing gas. Excitations induced by the interstellar radiation field and by collisions with electrons, hydrogen atoms, and protons are considered. The calculations are performed for temperatures between 10 and 15,000 K and densities between 0.001 and 1000 per cu cm. Limiting values of ionization are given for which recombination to an excited level can be neglected.

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