Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

Details Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...36l&link_type=abstract

Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 36-4

Computer Science

Performance

Scientific paper

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

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