Other
Scientific paper
Jul 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002apphl..81..763m&link_type=abstract
Applied Physics Letters, vol. 81, iss. no. 4, p. 763-765
Other
2
Cadmium Compounds, Carrier Density (Solid State), Crystal Defects, F Region, Fourier Transformation, Hall Effect, Infrared Spectra, Light Transmission, Mercury Cadmium Tellurides, Mercury Compounds, Optoelectronic Devices, Photodiodes, Point Defects, Semiconductor Devices, Semiconductors (Materials), Spectra, Transport Properties, Vacancies (Crystal Defects), X Ray Diffraction, Photodiodes, Phototransistors, Photoresistors, Noise Processes And Phenomena, Semiconductor-Device Characterization, Design, And Mo
Scientific paper
We found experimentally a linear dependence between the 1/f noise power in the HgCdTe photodiodes and the fraction of ionized Hg vacancies in the HgCdTe layer. The number and sign of charge carriers were deduced from Hall measurements. Total point-defect concentrations were extracted by using a combination of high-resolution x-ray diffraction for precise measurements of lattice parameters and Fourier transform infrared transmission for determination the Cd content. Experimental findings support the theoretical model recently developed by Gruneis [F. Gruneis, Physica A 282, 108 (2000); 290, 512 (2001)].
Lakin E.
Mainzer Nili
Zolotoyabko E.
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