Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition

Details Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition

Oct 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1131..143l&link_type=abstract

IN: Optical space communication; Proceedings of the Meeting, Paris, France, Apr. 24-26, 1989 (A90-38001 16-17). Bellingham, WA,

Computer Science

Performance

Gallium Arsenide Lasers, Indium Arsenides, Indium Phosphides, Phase Locked Systems, Semiconductor Diodes, Vapor Deposition, Evanescence, Laser Beams, Laser Outputs, Low Pressure, Organometallic Compounds, Semiconductor Junctions

Scientific paper

Results on phase-locked arrays of InGaAsP/InP index-guided diode lasers grown entirely by low pressure metalorganic chemical vapor deposition are presented. Two different array structures are compared: (1) the evanescently coupled array of inverted channeled substrate planar lasers and (2) the Y-junction coupled array of buried ridge lasers in order to assess their potential as sources of high powers in stable and narrow beam. Single-lobe beam operation is achieved by evanescent coupling, while the device is shown to be sensitive to fabrication and operation conditions and not practical as high power source. Uncoated Y-coupled arrays exhibit output power up to 158 mW CW/facet when bonded on diamond heat sink. Such devices are expected to give enhanced performance by further improvement in design and fabrication and should prove useful for free space optical communications.

Affiliated with

Also associated with

No associations

Rating

Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-locked arrays of InGaAsP/InP diode lasers grown by low-pressure metalorganic chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1535058