Performance of generation III 640 X 480 PtSi MOS array

Details Performance of generation III 640 X 480 PtSi MOS array Performance of generation III 640 X 480 PtSi MOS array

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225....2v&link_type=abstract

Proc. SPIE Vol. 2225, p. 2-10, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

Performance

Scientific paper

The design and performance of a third generation 640(H) X 480(V) PtSi focal plane array is presented. The 3 to 5 micron MWIR focal plane array supports interlaced, progressive scan, and subframe readout under control of on-chip digital decoders. The new design utilizes 1.25 micrometers design rules to achieve a 50% fill-factor, a noise equivalent delta temperature of <0.07 C (f/1.5, 30 Hz, 300 K), and a saturation level >1.5 X 10(superscript 6)e. The power dissipation is less than 110 mW.

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