Statistics – Applications
Scientific paper
Dec 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..193h&link_type=abstract
Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume
Statistics
Applications
Scientific paper
In this paper, a new pin/MISS photoreceiver with very high output current has been developed successfully by using the combination of the amorphous silicon germanium alloy pin photodiode and metal insulator semiconductor switch (MISS) device. The developed photoreceiver uses the pin photodiode as the light absorption structure and light wavelength selector and the MISS device as the photocurrent amplifier. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6V under an incident light power Pin equals 100 μW and has a rise time of 465 μs at a load resistance R equals 1 KΩ. The peak response wavelength of the diode is at 905 nm, i.e. infrared light. Thus the high output current pin/Miss photoreceiver provides a good candidate for the IR OEIC's applications.
Chen Chin-Ying
Fang Yean-Kuen
Ho Jyh-Jier
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