Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response

Details Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795..181c&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

Other

Scientific paper

In this paper, a thin PbTiO3-n-p+ silicon switch sensor has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The sensor has a rapid response time of 0.65 μs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. Meanwhile in this paper, we have successfully analyzed the rapid switching transient response by using heat conduction and switching theory. The experimental results are in agreement with the theoretical analysis.

Affiliated with

Also associated with

No associations

Rating

Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1310272