Optically controlled MIS-like InP-based FETs for photodetection and switching

Details Optically controlled MIS-like InP-based FETs for photodetection and switching Optically controlled MIS-like InP-based FETs for photodetection and switching

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..270s&link_type=abstract

Proc. SPIE Vol. 1735, p. 270-276, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Computer Science

Scientific paper

Field-effect transistors based on InP have many advantages over those based on GaAs. The major difficulty in realizing MESFETs based on InP, however, lies in low barrier height and breakdown voltage of Schottky gate. To overcome this, a pseudomorphic insulating layer instead of a conventional insulator on gate for a MIS-like FET structure is proposed in this paper. The computed I-V characteristics for such a structure having semitransparent gate metallization under dark and optically illuminated gate conditions are presented.

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