Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Details Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes

Oct 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2274...55m&link_type=abstract

Proc. SPIE Vol. 2274, p. 55-63, Infrared Detectors: State of the Art II, Randolph E. Longshore; Ed.

Computer Science

3

Scientific paper

Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.

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