Optical and electronic characterization on HgCdTe materials

Details Optical and electronic characterization on HgCdTe materials Optical and electronic characterization on HgCdTe materials

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795...52c&link_type=abstract

Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume

Computer Science

1

Scientific paper

Some new results about the optical and electronic characterization on HgCdTe materials have been reported in this paper. The photoluminescence measurements for HgCdTe sample have been performed to characterize the impurities states in HgCdTe and the quality of the crystal perfection. The optical constants in the energy region below, near and above the energy gap for Hg1-xCdxTe materials have been investigated by infrared spectroscopic ellipsometry measurements using a monochromatic dispersion infrared ellipsometer in the wavelength region of 2 to 12.5μm. Variable magnetic field Hall measurements (0-10T) were performed on MBE-grown Hg1-xCdxTe films and on boron ion implanted bulk n-type Hg1-xCdxTe at various temperatures (1.2 ~300K). By a hybrid approach consisting of mobility spectrum (MS) analysis followed by a multi-carrier fitting (MCF) procedure, the contributions to the total conductivity arising from all kinds of carriers in the sample including in the bulk and on the surface layer have been separated. The Cd composition distribution image for HgCdTe sample has been realized by using a thermal image system from measuring the transmittance distribution and calculating the composition distribution.

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