Online control for Cs-O layer of NEA photocathode

Details Online control for Cs-O layer of NEA photocathode Online control for Cs-O layer of NEA photocathode

Feb 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.4796...33c&link_type=abstract

Low-Light-Level and Real-Time Imaging Systems, Components, and Applications. Edited by Johnson, C. Bruce; Sinha, Divyendu; Lapl

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As compared with III generation intensifiers, IV generations have bigger sensitivity and much broader spectral response for low light level imaging detectors. IV generation intensifier properties are improved for NEA photo-cathode sensitivity and spectral response. In this paper, a new method is introduced to increase NEA photo-cathode sensitivity and expand infrared response. In the method, spectral response of GaAs:Cs-O NEA photo-cathode is controlled with automatic survey instrument of dynamic spectral response on photo-electronic materials. During processing NEA photo-cathode, it is observed that sensitivity rises slowly when photo-cathode is illuminated with incident ambient radiation, and infrared sensitivity begins reduction when photo-cathode is measured with automatic survey instrument. The reduction of infrared sensitivity has influenced on spectral matching factor of photo-cathode-object combination and detecting distance and has resulted in the practical use of low light level night vision instrument. During processing NEA photo-cathode with Cs-O layer, we can keep watching spectral response change with automatic survey instrument: when sensitivity rises slowly as photo-cathode is illuminated with incident ambient radiation and infrared sensitivity reaches a highest peak value, we can achieve optimum GaAs:Cs-O photo-cathode for low light level imaging detectors. We studied the thickness of a layer GaAs:Cs-O photo-cathode with take off X-Ray photo-electron spectroscopy, it is clear that the thickness of Cs-O layer is about 0.7~1.0 nm.

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