One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications

Details One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications

Jun 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2226...72g&link_type=abstract

Proc. SPIE Vol. 2226, p. 72-84, Infrared Readout Electronics II, Eric R. Fossum; Ed.

Computer Science

Scientific paper

Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO(subscript 2) gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

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