O.25μm Radiation Tolerant CMOS technology

Details O.25μm Radiation Tolerant CMOS technology O.25μm Radiation Tolerant CMOS technology

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002esasp.507...31r&link_type=abstract

Proceedings of the European Space Components Conference, ESCCON 2002, 24-27 September 2002, Toulouse, France. Compiled by R.A. H

Computer Science

Scientific paper

The MOS devices of the standard 0.25pm CMOS technology have been characterized for their immunity against ionizing radiation. While the shift of the threshold voltage is acceptable for total doses in the range of several KGy, the leakage of irradiated NMOST needed to be improved through process modification. Additional processing steps to optimize the lateral isolation of the transistors yielded devices with total dose immunity up to 4KGy. No special layout rules for the transistors are required which eliminates the need for a radiation tolerant specific design library and makes the radiation tolerant technology mask compatible with the standardprocess.

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