Numerical Simulations of Charge Transport in CdZnTe Gamma-Ray Semiconductor Detectors

Details Numerical Simulations of Charge Transport in CdZnTe Gamma-Ray Semiconductor Detectors Numerical Simulations of Charge Transport in CdZnTe Gamma-Ray Semiconductor Detectors

Apr 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997aps..aprg15107n&link_type=abstract

American Physical Society, APS/AAPT Joint Meeting, April 18-21, 1997, abstract #G15.107

Computer Science

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Cadmium-Zinc-Telluride (CdZnTe) is a semiconductor hard x-ray detector which offers the scientific community a new tool to probe faint, distant, astrophysical objects. Although capable of operating at room temperature with excellent energy resolution in the range from a few to a hundred keV, CdZnTe has yet to be optimized for use a space environment. Configuration of the detector as a coplanar pixelated array makes CdZnTe optimal for use in future space missions. The detector module of interest is comprised of an 8 x 8 array of 3 mm square pixels. By changing the size of the electrodes and the applied bias, the detector can be further enhanced for astrophysical use. Using a computer model simulating charge collection, an optimal electrode size and applied bias can be found which will maximize the performance of the detectors.

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