Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors

Details Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors Numerical simulation and analysis of the new 8- to 14-um GaAs/GaAlAs quantum well infrared photodetectors

Sep 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2894...54l&link_type=abstract

Proc. SPIE Vol. 2894, p. 54-58, Detectors, Focal Plane Arrays, and Applications, William G. Frederick; Junhong Su; Marc Wigdor;

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The simulation of a new type of GaAs/GaAlAs quantum well infrared photodetectors based on a new physics mechanism has been performed. The essential work is concentrated on the device parameters' influence on the energy levels and absorption peaks, they would have important effects on device design. Moreover, a new characteristics-infrared detector with bias-tuned wavelength is proposed.

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