Numerical Calculation Of The Hall Mobility Of InP

Details Numerical Calculation Of The Hall Mobility Of InP Numerical Calculation Of The Hall Mobility Of InP

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..582a&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 582-582 (2007).

Mathematics

Logic

Iii-V And Ii-Vi Semiconductors, Conductivity Phenomena In Semiconductors And Insulators, General Formulation Of Transport Theory

Scientific paper

The aim of this work, the Hall mobility of InP semiconductor compound
which is technologically important material is calculated with iterative
method. Furthermore, it is investigated that the calculated values of
mobility are depended on temperature interval 30 - 600K and carrier
concentrations at 300K.

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