Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

Details Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy

Jun 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2475...76p&link_type=abstract

Proc. SPIE Vol. 2475, p. 76-87, Infrared Detectors and Instrumentation for Astronomy, Albert M. Fowler; Ed.

Astronomy and Astrophysics

Astronomy

1

Scientific paper

A novel homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer is reported. The detector structures are classified according to their emitter layer doping concentrations (N(subscript d)). The threshold wavelength ((lambda) (subscript t)) is tunable in the IR wavelength range by changing N(subscript d) and bias voltage. This detector concept has been successfully demonstrated using forward biased commercial Si and Ge p-i-n diodes at 4.2 K. Threshold wavelengths ((lambda) (subscript t)) from around 40 - 220 micrometers for Si and up to 240 micrometers for Ge were experimentally obtained. A theoretical investigation including an estimation of workfunction dependence on N(subscript d), quantum efficiency calculations, and dark current analysis is reported. Based on these results, the detector noise equivalent power (NEP) limited by thermal noise and background noise is calculated.

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