Novel germanium photodetectors fabricated with a diffused junction

Details Novel germanium photodetectors fabricated with a diffused junction Novel germanium photodetectors fabricated with a diffused junction

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650...28m&link_type=abstract

Proc. SPIE Vol. 4650, p. 28-36, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

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Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50(mu) A/cm2 at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below (mu) A/cm2 at 80 degree(s)C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

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