Novel CMOS readout techniques for uncooled pyroelectric IR FPA

Details Novel CMOS readout techniques for uncooled pyroelectric IR FPA Novel CMOS readout techniques for uncooled pyroelectric IR FPA

Sep 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3360...60s&link_type=abstract

Proc. SPIE Vol. 3360, p. 60-71, Infrared Readout Electronics IV, Bedabrata Pain; Terrence S. Lomheim; Eds.

Computer Science

Performance

Scientific paper

Based on the application of the source follower per detector (SFD) input biasing technique, a new redout structure for the IR focal-plane-array (FPA), called the variable gain source follower per detector (VGSFD) is proposed and analyzed. The readout circuit of VGSFD of a unit cell of pyroelectric sensor under investigation, is composed of a source follower per detector circuit, high gain amplifier, and the reset switch. The VGSFD readout chip has been designed in 0.5 micrometers double-poly-double-metal n-well CMOS technology in various formats from 8 by 8 to 128 by 128. The experimental 8 by 8 VGSFD measurement results of the fabricated readout chip at room temperature have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 by 50 micrometers (superscript 2) pixel size.

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