Novel CID emulator for InSb array

Computer Science – Performance

Scientific paper

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Scientific paper

Based on our previous study of the single-gate charge-injection-device (CID) model we found that a serial connection of a diode and a capacitor can be used to emulate the full function of the single-gate CID under charge-sharing mode operation. With an additional capacitor, this model can be further extended to emulate the dual-gate CID which is necessary in developing the two-dimensional (2-D) focal-plane-array (FPA). These capacitors and diodes can be monolithically integrated together to replace the CID array. In the novel `CID emulator' array, in addition to preservation of the performance of the CID array, more advantages can be obtained. The major advantage is that the high quality oxide-InSb interface required in the CID array becomes unnecessary, and the restriction on the selection of the dielectric material is thus lifted. By choosing a dielectric material with a large dielectric constant, larger capacity and longer integration time become possible. The readout characteristics of the single-gate and dual-gate InSb-based CID emulator and an Si-based 16 X 1 CID emulator linear array are presented.

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