Noninvasive electrical characterization of semiconductor and interface

Details Noninvasive electrical characterization of semiconductor and interface Noninvasive electrical characterization of semiconductor and interface

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..213k&link_type=abstract

Proc. SPIE Vol. 4650, p. 213-220, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

Scientific paper

The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon : electron and hole mobility, electron mobility inside the grain, trapping.

Affiliated with

Also associated with

No associations

Rating

Noninvasive electrical characterization of semiconductor and interface does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Noninvasive electrical characterization of semiconductor and interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Noninvasive electrical characterization of semiconductor and interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-833872