Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials

Details Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554...97c&link_type=abstract

Proc. SPIE Vol. 2554, p. 97-108, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Computer Science

Scientific paper

A nondestructive characterization technique to determine free carrier concentration and mobility that is applicable to most n-type semiconductors, including infrared detector materials such as InSb and HgCdTe, is presented. The technique utilizes absorption and Faraday rotation in regions of the spectrum where these phenomena are due mostly to the free carriers themselves. Carrier concentration is directly proportional to the free carrier component of the rotation signal. Free carrier mobility is proportional to a simple ratio of the free carrier rotation to the free carrier absorption. Good agreement with Hall mobility data was obtained using a simpler version of this technique at room temperature. The proportionality constant is actually a complex quantum mechanical quantity that is temperature- and material-dependent. In this study, absorption data was obtained in the temperature range 77 K to 300 K in HgCdTe, n-type InSb, GaAs, and Si. Rotation data was measured at 300 K and calculated for lower temperatures using known values of electron effective mass and refractive index to determine this constant and make it available for practical mobility determinations at various infrared detector operating temperatures.

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