Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

Details Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

Feb 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986ited...33..218p&link_type=abstract

IEEE Transactions on Electron Devices (ISSN 0018-9383), vol. ED-33, Feb. 1986, p. 218-223. NASA-supported research.

Computer Science

Performance

1

Cryogenic Cooling, High Electron Mobility Transistors, Low Temperature, Noise Temperature, Photosensitivity, Aluminum Gallium Arsenides, Volt-Ampere Characteristics

Scientific paper

The four noise parameters of cryogenically cooled HEMTs have been investigated. Two different HEMT structures, with and without a spacer layer, were tested. The noise parameters of both structures were similar at room temperature, while they were dramatically different at cryogenic temperatures. The minimum noise temperatures measured at 8.4 GHz were 75 + or 5 K at room temperature and 8.5 + or - 1.5 K at the temperature of 12.5 K. The cryogenic performance is the best ever observed for field-effect transistors.

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