Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

Details Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

Aug 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5898..256t&link_type=abstract

UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XIV. Edited by Siegmund, Oswald H. W. Proceedings of the SPIE, Vol

Astronomy and Astrophysics

Astronomy

Scientific paper

DEPMOSFET based Active Pixel Sensor (APS) matrix devices, originally developed to cope with the challenging requirements of the XEUS Wide Field Imager, have proven to be a promising new imager concept for a variety of future X-ray imaging and spectroscopy missions like Simbol-X. The devices combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. A production of sensor prototypes with 64 x 64 pixels with a size of 75 μm x 75 μm each has recently been finished at the MPI semiconductor laboratory in Munich. The devices are built for row-wise readout and require dedicated control and signal processing electronics of the CAMEX type, which is integrated together with the sensor onto a readout hybrid. A number of hybrids incorporating the most promising sensor design variants has been built, and their performance has been studied in detail. A spectroscopic resolution of 131 eV has been measured, the readout noise is as low as 3.5 e- ENC. Here, the dependence of readout noise and spectroscopic resolution on the device temperature is presented.

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