Computer Science
Scientific paper
Jul 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684...84c&link_type=abstract
In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 84-92.
Computer Science
Cryogenic Temperature, Field Effect Transistors, Heterojunction Devices, Readout, Carrier Mobility, Gallium Arsenides, Gates (Circuits), Thermal Noise
Scientific paper
Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.
Baier Steven M.
Cunningham Thomas J.
Fossum Eric R.
No associations
LandOfFree
Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1532532