New process for the controlled formation of ultrathin PtSi films for infrared detector applications

Details New process for the controlled formation of ultrathin PtSi films for infrared detector applications New process for the controlled formation of ultrathin PtSi films for infrared detector applications

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..185t&link_type=abstract

Proc. SPIE Vol. 2554, p. 185-190, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

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Scientific paper

A simple method for controlling the thickness of PtSi for infrared detectors is presented. Thicknesses of PtSi in the range of 2 - 5 nm can be controlled via the reaction kinetics of the silicidation. Compared to conventional furnace anneal, the thickness and homogeneity of the resulting PtSi-layers are independent of the deposited Pt-thickness. Superior uniformity, lower continuous film thicknesses of the PtSi-layers, and smoother PtSi/Si-interfaces than possible by conventional furnace anneal are achieved by applying this technique.

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