Near-room operating temperature SWIR InGaAs detectors in progress

Details Near-room operating temperature SWIR InGaAs detectors in progress Near-room operating temperature SWIR InGaAs detectors in progress

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2552..738h&link_type=abstract

Proc. SPIE Vol. 2552, p. 738-747, Infrared Technology XXI, Bjorn F. Andresen; Marija S. Scholl; Eds.

Computer Science

Performance

Scientific paper

Since 1985, when THOMSON-CSF/TCS became involved in detector development for remote earth imaging applications, the InGaAs technology has been greatly improved leading to spreading use in a wide range of domains. Space born applications in the SPOT 4, Vegetation (SPOT 4 host), IRS C/D, and Huygens/Cassini programs are among the most brilliant successes. Initial industrial demonstrations, which have come last, are contributing to InGaAs demystification. We present InGaAs main forces and difficulties, and how recent progress has transformed the product offer toward these main points. Figures concerning dark current, noise (especially burst noise), spectral response, non linearity, and modulation transfer function (MTF), which are of main importance in detector arrays are presented. Trade-offs are pointed out with respect to end application. InGaAs supremacy in the 0.9 micrometer to 1.7 micrometer spectral range is discussed -- dark current density down to 2E - 08 A/cm2 and more than 85% quantum efficiency are currently obtained nowadays. Finally, InGaAs industrial maturity is emphasized as well as the strong and lively activity at THOMSON/TCS on technology which lets everyone expect increasing performances and recessing prices.

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