NASA AMES infrared detector assemblies

Details NASA AMES infrared detector assemblies NASA AMES infrared detector assemblies

Oct 1979

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979stin...8129047.&link_type=abstract

Final Report Carson Alexiou Corp., Costa Mesa, CA.

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Applications

Arrays, Electronic Modules, Fabrication, Infrared Detectors, Quantum Efficiency, Semiconductor Devices, Boron, Chips (Electronics), Doped Crystals, Electrical Properties, Gallium Compounds, Signal To Noise Ratios, Silicon

Scientific paper

Silicon: Gallium infrared detector assemblies were designed, fabricated, and tested using techniques representative of those employed for hybrid arrays to determine the suitability of this candidate technology for infrared astronomical detector array applications. Both the single channel assembly and the assembly using a 32 channel CMOS multiplexer are considered. The detector material was certified to have a boron background of less than 10 to the 13th power atoms/sq cm counter doped with phosphorus. The gallium concentration is 2 x 10 to the 16th power atoms/cu cm.

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