MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Details MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5564..113l&link_type=abstract

Infrared Systems and Photoelectronic Technology. Edited by Dereniak, Eustace L.; Sampson, Robert E.; Johnson, C. Bruce. Proceed

Computer Science

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4

Scientific paper

Mid wavelength infrared (MWIR) HgCdTe heterostructures were grown on 3-inch dia Si (211) substrates by the molecular beam epitaxy technique and p+n format devices were fabricated by arsenic ion implantation. Very long wavelength infrared (VLWIR) layers have been employed as interfacial layers to block the propagation of detects from the substrate interface into the HgCdTe epilayers. Excellent material characteristics including the minority carrier lifetime of 7.2 usec at 200K and 2 usec at 80K in the n-HgCdTe absorber layer with 5 um cut-off wavelength at 80K were achieved. The photovoltaic detectors fabricated on these MWIR heterostructures show excellent zero-bias resistance-area product (R0A) on the order of 108 ohm-cm2 and peak dynamic impedances on the order of 109 ohm-cm2. A two-step arsenic activation anneal followed by the 'Hg' vacancy filling anneal (third step) is shown to produce the best R0A values, since the intermediate temperature annealing step seems to control the diffusion of arsenic, assisted by the implantation-induced defects. The experimental R0A values are compared with that predicted by theory based on a one-dimensional model, indicating g-r limited performance of these MWIR devices at 80K.

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