MOVPE growth of Sb-based semiconductors in a 9×2-inch Planetary® Reactor

Details MOVPE growth of Sb-based semiconductors in a 9×2-inch Planetary® Reactor MOVPE growth of Sb-based semiconductors in a 9×2-inch Planetary® Reactor

Nov 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004aipc..738..267g&link_type=abstract

THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: Sixth Conference on Thermophotovoltaic Generation of Electricity: TPV6. AIP Confe

Other

Iii-V Semiconductors, Vapor Phase Epitaxy, Growth From Vapor Phase, Photoelectric Conversion: Solar Cells And Arrays, Thermoelectric, Electrogasdynamic And Other Direct Energy Conversion

Scientific paper

Focus of the paper is the MOVPE process development for Al-containing antimonides on GaSb substrates, which has been proven to be specifically challenging. First, the deoxidation of GaSb substrates was investigated. It was found that Ga2O3 is reduced to volatile Ga2O at moderate temperatures by molecular hydrogen used as carrier gas in the MOVPE environment. For the deposition of the Al-containing antimonides DMEAA (dimethylethylamine alane) was used as Al-precursor. Unfortunately this precursor suffers from severe pre-reactions with other metalorganics (MO) and a low vapor pressure. To meet the challenging demands of the industrial growth of Al-containing antimonides an AlX2600-G3 Planetary Reactor® with new 9×2-inch substrate configuration was developed. This is the first multiwafer reactor that was specifically designed for the growth of antimonides. Major advantages of this reactor are the reduction of pre-reactions, higher MO efficiency as well as excellent layer homogeneity and reproducibility.

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