Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications

Details Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications Monolithic lead-chalcogenide IR-diode arrays on silicon: fabrication and use in thermal imaging applications

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735...54m&link_type=abstract

Proc. SPIE Vol. 1735, p. 54-61, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Computer Science

3

Scientific paper

A narrow gap semiconductor layer grown directly on a Si-substrate is the preferable approach to realize large IR-focal plane arrays. We report on our new work on lead chalcogenide photovoltaic IR-detector arrays, grown monolithically on Si (111) substrates using a stacked CaF(subscript 2)/BaF(subscript 2) buffer layer. The sensor fabrication process is described, and a simple thermal camera system is used to verify the functionality of our arrays. An epitaxial narrow gap lead chalcogenide layer of only 3 micrometers thickness is grown on an 0.3 micrometers thick CaF(subscript 2)/BaF(subscript 2) buffer layer on Si (111), both using Molecular Beam Epitaxy. Photovoltaic IR-detectors are formed by deposition of a blocking Pb contact on the p-type semiconducting surface. We fabricated staggered linear sensor arrays with up to 2 X 128 pixels and with the cut off ranging from 3 to 12 micrometers . For demonstration, we built up a simple thermal camera using our detector arrays as the IR sensitive element. The read out is done using a new multiplexed direct injection device, capable to store large charge packages and offering individual biasing for each diode. The IR-diodes are fabricated monolithically on the completely finished readout chip.

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