Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

Details Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

Jan 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420..698d&link_type=abstract

Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 698-702 (1998).

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Photoelectric Conversion: Solar Cells And Arrays, Molecular, Atomic, Ion, And Chemical Beam Epitaxy

Scientific paper

This work reports the first InP solar cells, InP/In0.53Ga0.47As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported.

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