Statistics – Applications
Scientific paper
Feb 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991phdt........70d&link_type=abstract
Thesis (PH.D.)--UNIVERSITY OF ILLINOIS AT CHICAGO, 1991.Source: Dissertation Abstracts International, Volume: 52-07, Section: B,
Statistics
Applications
1
Mercury Cadmium Telluride
Scientific paper
The semiconductor alloy Hg_{1 -x}Cd_ xTe has become the most important semiconductor for applications in the near and mid infrared as a detector. One of the most important figures of merit of a detector is the minority carrier lifetime. This parameter is directly related to other important figures of merit, and its value is directly related to the potential of the material as an infrared detector. The minority carrier lifetime depends strongly on recombination centers having levels in the middle of the gap. There have been reports in the literature of two deep levels located at.5E _{g} and.75E_{g }. These two levels limit the lifetime via the Shockley-Read recombination. In this work these two levels were investigated in p-type and n-type Molecular Beam Epitaxy grown HgCdTe. We studied their character and how they are related to the macroscopic defects, sample thickness and growth orientation. While investigating these two levels we found a deep acceptor level located at.3E_{g }, which is present mostly in p-type (111)B samples although it also appears in one n-type (211) sample. The findings revealed that the levels at.5E _{g} and.75E_{g } have a donor-like character and that they do not depend on the growth orientation. Of the two, the.5 E_{g}<=vel was investigated in greater detail. It was revealed that mercury vacancies should be ruled out as being the direct cause of this level. It is implied that it is probably caused by tellurium antisite. Trapping and surface effects were also investigated in the samples and the surface velocity was found for two samples. In resume, in this work we have investigated deep levels in MBE grown HgCdTe samples by means of the study of the minority carrier lifetime. It has been proven that the mercury vacancies are not the cause of the midgap donor level and it has added more information about the donor -like character of the.75E_{g} <=vel. Besides these two donor levels we have also found an acceptor level located around.3E _{g}.
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