Mid-IR HgCdTe double heterostructure lasers

Details Mid-IR HgCdTe double heterostructure lasers Mid-IR HgCdTe double heterostructure lasers

Jun 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1634..161z&link_type=abstract

IN: Laser diode technology and applications IV; Proceedings of the Meeting, Los Angeles, CA, Jan. 20-22, 1992 (A92-48059 20-36).

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Applications

4

Current Density, Heterojunction Devices, Infrared Lasers, Injection Lasers, Mercury Cadmium Tellurides, Threshold Currents, Far Fields, Light Emitting Diodes, Molecular Beam Epitaxy, Photodiodes, Quantum Wells, Secondary Ion Mass Spectrometry, Spectrum Analysis

Scientific paper

The fabrication and characteristics of the first Hg(1-x)Cd(x)Te double heterostructure mid-IR injection laser (Zandian et al., 1991) are described in detail, and new results on an expanded range of operation of this laser are presented. Three new double heterostructures were grown, which all produced working lasers operating under pulsed current at temperatures between 40 and 90 K. At 77 K, their emission wavelengths were 2.9, 3.4, and 3.9 microns; the lowest threshold current density measured was 521 A/sq cm, very close to that predicted by a numerical calculation.

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