MEMS incandescent light source

Details MEMS incandescent light source MEMS incandescent light source

Oct 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4134..151t&link_type=abstract

Proc. SPIE Vol. 4134, p. 151-158, Photonics for Space Environments VII, Edward W. Taylor; Ed.

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Scientific paper

A MEMS-based, low-power, incandescent light source is being developed. This light source is fabricated using three bonded chips. The bottom chip consists of a reflector on Silicon, the middle chip contains a Tungsten filament bonded to Silicon and the top layer is a transparent window. A 25-micrometers -thick spiral filament is fabricated in Tungsten using lithography and wet- etching. A proof-of-concept device has been fabricated and tested in a vacuum chamber. Results indicate that the filament is electrically heated to approximately 2650 K. The power required to drive the proof-of-concept spiral filament to incandescence is 1.25 W. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 micrometers . The micromachining techniques used to fabricate this light source can be applied to other MEMS devices.

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