Computer Science
Scientific paper
Sep 2003
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5126..427b&link_type=abstract
17th International Conference on Photoelectronics and Night Vision Devices. Edited by Filachev, Anatoly M.; Dirochka, Alexander
Computer Science
1
Scientific paper
An analysis of the relaxation process for cation defects in Hg1-xCdxTe that form in the thermal spike at ion-beam milling (IBM) taking into account the neutral mercury bi-vacancies has been performed. It has been enabled to define a correct expression for concentration of the interstitial mercury created at IBM in the mercury diffusion source that is a boundary condition for equations of the diffusion kinetics. Expressions for depth of the p-n conductivity type conversion in both vacancy-doped p-Hg1-xCdxTe and one doped with As, Sb were obtained. There was a good accord between computed dependence of the conversion depth on the ion dose for vacancy-doped Hg1-xCdxTe (x≍0.2) with available literature experimental data. This fact well confirm the model adequacy.
Bogoboyashchiy Victor V.
Izhnin Igor I.
No associations
LandOfFree
Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg1-xCdxTe under ion-beam milling does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg1-xCdxTe under ion-beam milling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg1-xCdxTe under ion-beam milling will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1089968