Measurement of the decay rate of the SiH feature as a function of temperature

Details Measurement of the decay rate of the SiH feature as a function of temperature Measurement of the decay rate of the SiH feature as a function of temperature

Mar 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994lpi....25.1013n&link_type=abstract

In Lunar and Planetary Inst., The Twenty-Fifth Lunar and Planetary Science Conference. Part 2: H-O p 1013-1014 (SEE N94-36136 11

Computer Science

Decay Rates, Half Life, Hydrides, Radioactive Decay, Silicon Compounds, Temperature Effects, Oxidation, Regolith, Silicates, Solar Wind

Scientific paper

We have previously suggested that the SiH fundamental stretch could serve as a diagnostic indicator of the oxidation state of silicate surfaces exposed to the solar wind for prolonged periods. We have now measured the primary decay rate of SiH in vacuo as a function of temperature and find that the primary rate constant for the decay can be characterized by the following equation: k(min(exp -1)) approximately equals 0.186 exp(-9/RT) min(exp -1), where R = 2 x 10(exp -3) kcal deg(exp -1) mole(exp -1). This means that the half-life for the decay of the SiH feature at room temperature is approximately 20 yrs, whereas the half-life at a peak lunar regolith temperature of approximately 500K would be only approximately 20 days. At the somewhat lower temperature of approximately 400K the half-life for the decay is on the order of 200 days. The rate of loss of SiH as a function of temperature provides an upper limit to the quantity of H implanted by the solar wind which can be retained by a silicate grain in a planetary regolith. This will be discussed in more detail here.

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